BY329X-1200,127;中文规格书,Datasheet资料.pdf

Philips Semiconductors Product specification Rectifier diodes BY329F, BY329X series fast, soft-recovery FEATURES SYMBOL QUICK REFERENCE DATA ? Low forward volt drop V R = 800 V/ 1000 V/ 1200 V ? Fast switching ? Soft recovery characteristic I F(AV) = 8 A ? High thermal cycling performance ? Isolated mounting tab I FSM ≤ 65 A t rr ≤ 145 ns GENERAL DESCRIPTION Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies. The BY329F series is supplied in the conventional leaded SOD100 package. The BY329X series is supplied in the conventional leaded SOD113 package. PINNING SOD100 SOD113 PIN DESCRIPTION 1 cathode 2 anode tab isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BY329F / BY329X -800 -1000 -1200 V RSM Peak non-repetitive reverse - 800 1000 1200 V voltage V RRM Peak repetitive reverse voltage - 800 1000 1200 V V RWM Crest working reverse voltage - 600 800 1000 V I F(AV) Average forward current 1 square wave; δ = 0.5; - 8 A T hs ≤ 83 ?C sinusoidal; a = 1.57; - 7 A T hs ≤ 90 ?C I F(RMS) RMS forward current - 11 A I FRM Peak repetitive forward current t = 25 μs; δ = 0.5; - 16 A T hs ≤ 83 ?C I FSM Peak non-repetitive forward t = 10 ms - 65 A current. t = 8.3 ms - 71 A sinusoidal; T j = 150 ?C prior to surge; with reapplied V RWM(max) I 2 t I 2 t for fusing t = 10 ms - 28 A 2 s T stg Storage temperature -40 150 ?C T j Operating junction temperature - 150 ?C 1. Neglecting switching and reverse current losses. k a 1 2 1 2 case 1 2 case September 1998 1 Rev 1.100 / Philips Semiconductors Product specification Rectifier diodes BY329F, BY329X series fast, soft-recovery ISOLATION LIMITING VALUE CHARACTERISTIC T hs = 25 ?C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT