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AO8810替代型号DMN2019UTS
20V N-CHANNEL ENHANCEMENT MODE MOSFET
AO8810替代型号DMN2019UTS
V(BR)DSS
RDS(ON) max
ID max TA = 25°C
20V
18.5m? @ VGS = 10V
5.4 A
21m? @ VGS = 4.5V
5.0 A
24m? @ VGS = 2.5V
4.6 A
31m? @ VGS = 1.8V
3.5 A
Description
This new generation MOSFET has been designed to minimize the on-
Features
? Low On-Resistance
? Low Input Capacitance
? Fast Switching Speed
? ESD Protected up to 2KV
? Totally Lead-Free Fully RoHS Compliant (Notes 1 2)
? Halogen and Antimony Free. “Green” Device (Note 3)
? Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management applications.
Applications
? Power management functions
? Load Switch
? Case: TSSOP-8
? Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
? Moisture Sensitivity: Level 1 per J-STD-020
? Terminal Connections: See Diagram Below
? Weight: 0.039 grams (approximate)
D D
G1
ESD PROTECTED TO 2kV
Top View Bottom View Top View
S1 S2
hannel N-Channel
Pin Configuration Internal Schematic
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN2019UTS-13
TSSOP-8
2500/Tape Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) 2011/65/EU (RoHS 2) compliant.
2. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, Green and Lead-free.
3. Halogen- and Antimony-free Green” products are defined as those which contain 900ppm bromine, 900ppm chlorine (1500ppm total Br + Cl) and
1000ppm antimony compounds.
4. For packaging details, go to our website at .
Marking Information
Logo
Part no
Xth week: 01~53 Year: “12” = 2012
Top View
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 5) VGS = 10V
Steady State
TA = +25?C TA = +70?C
ID
5.4
4.3
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