AON2410规格书.pdfVIP

AON2410 30V N-Channel MOSFET General Description Product Summary V DS I D (at V GS =4.5V) 8A R DS(ON) (at V GS = 4.5V) 21m? R DS(ON) (at V GS = 2.5V) 28m? Symbol V DS The AON2410 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for load switch and battery protection applications. V Maximum UnitsParameter Absolute Maximum Ratings TA=25°C unless otherwise noted 30V Drain-Source Voltage 30 G D S DFN 2x2B Top View Bottom View Pin 1 D D G D D S D S Pin 1 V GS I DM T J , T STG Symbol t ≤ 10s Steady-State 45 Thermal Characteristics Units Maximum Junction-to-Ambient A Parameter Typ Max I D A T A =70°C 2.8 6 Pulsed Drain Current C 32 A Continuous Drain Current G 8TA=25°C V±12Gate-Source Voltage °C/WMaximum Junction-to-Ambient A D 80 W T A =70°C 1.8 T A =25°C °C/W RθJA 37 66 Junction and Storage Temperature Range -55 to 150 Power Dissipation A P D °C Rev 0 : Dec 2011 Page 1 of 5 AON2410 Symbol Min Typ Max Units BV DSS 30 V V DS =30V, V GS =0V 1 T J =55°C 5 I GSS ±100 nA V GS(th) Gate Threshold Voltage 0.6 1.07 1.5 V I D(ON) 32 A 17.1 21 T J =125°C 26 32 21.2 28 m? g FS 50 S V SD 0.7 1 V I S 3.5 A C iss 813 pF C oss 98 pF C rss 56 pF R g 2.3 3.5 ? Q g 8 12 nC Q gs 1.2 nC Q gd 2.6 nC t D(on) 3 ns t r 3 ns t 26 ns Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Reverse Transfer Capacitance V GS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge V GS =4.5V, V DS =15V, I D =8AGate Source Charge Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime V GS =4.5V, V DS =15V, R L =1.8?, R =3? Zero Gate Voltage Drain Current Gate-Body leakage current m? I S =1A,V GS =0V V DS =5V, I D =8AForward Transconductance Diode Forward Voltage V GS =2.5V, I D =4A Electrical Characteristics (T J =25°C unless otherwise noted) STA