AON2801规格书.pdf

Symbol VDS VGS IDM TJ, TSTG Symbol Typ Max 35 45 65 85 120 155 175 235 Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W Junction and Storage Temperature Range -55 to 150 °C Power Dissipation A TA=25°C PDSM 1.5 Pulsed Drain Current C -15 Continuous Drain Current A TA=25°C ID Maximum UnitsParameter V V±8Gate-Source Voltage Drain-Source Voltage -20 Thermal Characteristics Parameter Units -3 W TA=70°C 0.95 ATA=70°C -2.3 Maximum Junction-to-Ambient B t ≤ 10s RθJA °C/W Maximum Junction-to-Ambient B Steady-State °C/W AON2801 Dual P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -20V ID = -3A (VGS = -4.5V) RDS(ON) 120m? (VGS = -4.5V) RDS(ON) 160m? (VGS = -2.5V) RDS(ON) 200m? (VGS = -1.8V) General Description The AON2801/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AON2801 and AON2801L are electrically identical. -RoHS Compliant -Halogen Free* G1 D1 S1 G2 D2 S2 DFN 2x2 Package Top Bottom S1 G1 D2 S2D1 G2 Alpha Omega Semiconductor, Ltd. AON2801 Symbol Min Typ Max Units BVDSS -20 V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) -0.3 -0.55 -1 V ID(ON) -15 A 100 120 TJ=125°C 135 170 128 160 m? 160 200 m? gFS 6 S VSD -0.76 V IS -1 A Ciss 540 700 pF Coss 90 pF Crss 63 pF Rg 9.5 ? Qg 5 6.5 nC Qgs 1.2 nC Qgd 1 nC tD(on) 5 ns tr 40 ns tD(off) 28.5 ns tf 46 ns trr 21 28 ns Qrr 9.1 nC -15 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Parameter Conditions STATIC PARAMETERS Electrical Characteristics (TJ=25°C unless otherwise noted) Drain-Source Break