Electrical Instabilities and Low-Frequency Noise in.pdf

INVITED PAPER 978-1-4244-5598-0/10/$26.00 ?2010 IEEE IPFA 2010 Electrical Instabilities and Low-Frequency Noise in InGaZnO Thin Film Transistors Jong-Ho Lee, Hyuck-In Kwon*, Hyungcheol Shin, Byung-Gook Park, and Young June Park *School of Electrical and Electronics Engineering, Chung-Ang University, Seoul School of Electrical Engineering and Computer Science, Seoul National University, Seoul Phone: (82) 2 880 7285. Fax: (82) 2 882 4658. Email: jhl@snu.ac.kr Abstract-Our recent works concerning the electrical instability and low frequency noise (LFN) behaviors of a-IGZO TFTs are reviewed and significant results are reported. The experimental and modeling study of bias-stress-induced threshold voltage instabilities shows that the threshold voltage shift is mainly attributed to the electron injection from the channel into interface/dielectric traps in a-IGZO TFTs. By comparing the results from devices with different dielectrics, we find that the magnitude and time dependence of the threshold voltage shift are strongly dependent on the gate dielectric material in a-IGZO TFTs. The measured noise power spectral density shows that the LFN in a-IGZO TFTs obeys the classical 1/f noise theory, i.e., fits well to a 1/f γ power law with γ ~ 1 in the low frequency range. From the dependence of normalized noise power spectral density on the gate voltage, the bulk mobility fluctuation is considered as a dominant LFN mechanism of a-IGZO TFTs in the linear operation regime. I. INTRODUCTION Recently, amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) have attracted much attention for applications in mobile electronics, future displays, and other consumer electronics due to their excellent electrical and optical characteristics [1]-[3]. Although the potential advantages of a-IGZO TFTs are m