WPM2087可能低阻抗的通路.pdf

WPM2087 WPM2087 Single P-Channel, -20V, -4.3A, Power MOSFET Descriptions The WPM2087 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2087 is Pb-free. Features ? Trench Technology ? Supper high density cell design ? Excellent ON resistance ? Extremely Low Threshold Voltage ? Small package SOT-23 Applications ? DC/DC converters ? Power supply converters circuit ? Load/Power Switching for portable device SOT-23 Pin configuration (Top view) PE = Device Code Y = Year W = Week(A~z) Marking Order information Device Package Shipping WPM2087-3/TR SOT-23 3000/TapeReel VDS (V) Typical RDS(on) (mΩ) -20 34@ VGS=-4.5V 39 @ VGS=-3.1V 45 @ VGS=-2.5V D 3 G S 1 2 WPM2087 Absolute Maximum ratings Thermal resistance ratings a. Surface mounted on FR4 Board using 1 in sq pad size, 1oz Cu. b. Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu. c. Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%. d. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 Continuous Drain Current a d TA=25°C ID -4.3 -3.6 A TA=70°C -3.4 -2.9 Maximum Power Dissipation a d TA=25°C PD 1.2 0.9 W TA=70°C 0.8 0.6 Continuous Drain Current b d TA=25°C ID -3.4 -3.1 A TA=70°C -2.7 -2.5 Maximum Power Dissipation b d TA=25°C PD 0.8 0.7 W TA=70°C 0.5 0.4 Pulsed Drain Current c IDM -18 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Ra