多孔硅的制备汇编.doc

多孔硅的制备与表征 [摘要]多孔硅（Porous Si）是一种具有纳米多孔结构的材料，可以通过晶体硅或非晶硅在氢氟酸中进行阳极氧化来获得。多孔硅由于原料储备大，制作工艺简单，是一种很有潜力的材料。同时，多孔硅作为一种硅基纳米发光材料，由于具有与现有硅芯片集成容易、研制成本低以及发射光均匀、多色等优点而被国内外科学家广泛研究，现已成为20世纪90年代以来硅基纳米材料的主要代表。 本论文在进行大量的文献调研基础上，对多孔硅的发展历史、形成机理、分类方法、制备方法及应用方向等进行了简要概述。本论文研究了多孔硅的制备技术和表征，用比较简单且经济实惠的方法制备了多孔硅，并比较了在不同条件下制得的多孔硅形貌特征和结构差异。 [关键词]多孔硅；电化学方法；结构；光致发光 Preparation and Characterization of the Porous Silicon Electronic Information Engineering Specialty SI Wen-fang Abstract: Porous silicon(PS) is a material with nanoporous structure. It can be obtained through the crystalline silicon or amorphous silicon anodic oxidation in hydrofluoric acid. Because of its big raw materials reserve and simple manufacturing process, porous silicon is a potential material. At the same time, as a silicon-based material with light-emitting function, porous silicon has been widely researched by scientists all of the world and becomes a represent of silicon-based nanometer materials because of its merits, such as easy integrating with silicon chips, low cost, several colors light emitting etc. Based on a lot of literature investigation, the development history, the forming mechanism, classification, preparation method and the applied direction of the porous silicon is briefly reviewed in this paper. The preparation technology and characterization of porous silicon is researched in this paper. A simple and economical method of the preparation is used in the experiment. Besides, the appearance characteristics and structural differences of the porous silicon in different conditions are discussed in this paper. Key words: Porous silicon; electrochemical method; structure; photoluminescence 目 录 1 引言 1 2 多孔硅基本原理与概述 1 2.1 多孔硅发展历史 1 2.2.1 Beale耗尽模型 2 2.2.2 扩散限制模型 2 2.2.3 量子限制模型 2 2.3 多孔硅的分类 4 2.4 多孔硅的制备方法 5 2.4.1 阳极腐蚀法 5 2.4.2 水热腐蚀法 6 2.4.3 火花放电法 7 2.4.4 化学腐蚀法 7 2.5 多孔硅的应用 7 3 多孔硅制备的实验过程 8 3.1 仪器和试剂 8 3.2 单晶硅片清洗 8 3.3 多孔硅制备 8 3.4 多孔硅表面处理 9 3.4.1 阳极氧化表面处理法 10 3.4.2 阴极还原表面处理法 10 4 多孔硅的微结构研究 10 4.1 制备多孔硅的实验结果