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IRFR3411TRPBF;IRFR3411PBF;中文规格书,Datasheet资料
IRFR3411PbF
IRFU3411PbF
HEXFET? Power MOSFET
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.2
RθJA Junction-to-Ambient (PCB mount)* ––– 50 °C/W
RθJA Junction-to-Ambient ––– 110
Thermal Resistance
1
VDSS = 100V
RDS(on) = 44m?
ID = 32A
S
D
G
Advanced HEXFET? Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The
straight lead, I-Pak, version (IRFU series) is for through-
hole mounting applications. Power dissipation levels up
to 1.5 watts are possible in typical surface mount
applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 32
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A
IDM Pulsed Drain Current 110
PD @TC = 25°C Power Dissipation 130 W
Linear Derating Factor 0.83 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 16 A
EAR Repetitive Avalanche Energy 13 mJ
dv/dt Peak Diode Recovery dv/dt 7.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
D-Pak
IRFR3411PbF
I-Pak
IRFU3411PbF
PD - 95371B
/
2
S
D
G
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 16
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