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Josephson junctions and superconducting quantum interference devices made by local oxidatio.pdf

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Josephson junctions and superconducting quantum interference devices made by local oxidatio

Josephson junctions and superconducting quantum interference devices made by local oxidation of niobium ultrathin films V. Bouchiat, M. Faucher GPEC, UMR CNRS 6631, Université de la Méditerranée, Case 901, 13288 Marseille, France. C. Thirion, W. Wernsdorfer Laboratoire Louis Néel, UPR CNRS 5051, BP 166, 38042 Grenoble, France. T. Fournier, B. Pannetier CRTBT, UPR CNRS 5001, BP 166, 38042 Grenoble, France. ABSTRACT We present a method for fabricating Josephson junctions and superconducting quantum interference devices (SQUIDs) which is based on the local anodization of niobium strip lines 3 to 6.5 nm-thick under the voltage-biased tip of an Atomic Force Microscope. Microbridge junctions and SQUID loops are obtained either by partial or total oxidation of the niobium layer. Two types of weak link geometries are fabricated : lateral constriction (Dayem bridges) and variable thickness bridges. SQUIDs based on both geometries show a modulation of the maximum Josephson current with a magnetic flux periodic with respect to the superconducting flux quantum h/2e. They persist up to 4K. The modulation shape and depth for SQUIDs based on variable thickness bridges indicate that the weak link size becomes comparable to the superconducting film coherence length ? which is of the order of 10nm. Corresponding author : Vincent Bouchiat Tel : +33 4 91 82 92 16 Fax : +33 4 91 82 91 76 e-mail : bouchiat@gpec.univ-mrs.fr Keywords : lithography, superconductivity, SQUID, nanostructures, anodisation, Scanning Probe Microscopy. 2Nanolithography using scanning probe microscopes (SPM) offers powerful methods [1] for patterning surfaces with a resolution beyond the range of conventional lithographies based on resist exposures. During the last decade, these techniques have brought some important features to device fabrication, such as easy alignment and in-situ control of the device electrical characteristics during its fabrication [2]. Furthermore, local probe techniques based on near fiel