AZO透明导电薄膜的制备AZO透明导电薄膜的制备.pdfVIP

第 31 卷 第 6 期 电子元件与材料 Vol.31 No.6 2012 年 6 月 ELECTRONIC COMPONENTS AND MATERIALS Jun. 2012 研究与试 制 AZO 透明导电薄膜的制备 刘丹妮，史永胜，马猛飞，杨巍巍，杨若欣 （陕西科技大学 电气与信息工程学院，陕西 西安 710021） 摘要: 采用射频磁控溅射法在玻璃衬底上制备了 ZnO: Al(AZO)透明导电薄膜，并借助 XRD、SEM 等表征方法， 研究了溅射功率和衬底温度对薄膜结构、表面形貌及光电特性的影响。结果表明，制备薄膜的最佳溅射功率和衬底 温度分别为 180 W、200 ℃，在此条件下制备的 AZO 薄膜具有明显的 c 轴(002)择优取向，其最低方块电阻为 18 ?/□， 在可见光范围内的平均透光率超过 91%，且透明导电性能优于目前平板显示器的要求，有望取代现在市场上的主流 氧化铟锡(ITO)薄膜。 关键词: AZO；溅射功率；衬底温度；结构特性；光电特性 中图分类号: O484 文献标识码:A 文章编号:1001-2028（2012）06-0071-05 Preparation of AZO transparent conductive thin films LIU Danni, SHI Yongsheng, MA Mengfei, YANG Weiwei, YANG Ruoxin (College of Electrical and Information Engineering, Shanxi University of Science and Technology, Xi’an 710021, China) Abstract: Aluminum doped zinc oxide films were deposited by RF-magnetron sputtering method on glass substrate, the effects of sputtering power and substrate temperature on the structure, surface topography, photoelectric properties of AZO films were investigated by using XRD、SEM, et al. The results show that the best sputtering power and substrate temperature to prepare films are 180 W and 200 ℃ respectively. The AZO film prepared on this condition is highly oriented along c-axis (002), and the lowest sheet resistance is 18 ?/□, the average transmittance in the visible light range is over 91%. Its transparent and conductive properties are superior to the current requirements of flat-panel displays, thus it is expected to replace indium tin oxide (ITO) film which is the mainstream thin film on the market now. Key words: AZO; sputtering powe