hd1750jl技术资料下载-HD1750JL.PDF

PRELIMINARY DATA This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. February 2007 Rev 3 1/10 10 Features ■ State-of-the-art technology: diffused collector “enhanced generation“ EHVS1 ■ Wider range of optimum drive conditions ■ Less sensitive to operating temperature variation ■ In compliance with the 2002/93/EC European directive Description The HD1750JL is manufactured using Diffused Collector in Planar technology adopting new and Enhanced High Voltage Stricture 1 (E.H.V.S.1) developed to fit High-Definition CRT display. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Applications ■ High-definition and slim CRT TV and monitors Internal schematic diagram TO-264 1 2 3 HD1750JL Very high voltage NPN power transistor for high definition and slim CRT display Order code Part number Marking Package Packaging HD1750JL HD1750JL TO-264 Tube 2/10 Electrical ratings HD1750JL 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 1700 V VCEO Collector-emitter voltage (IB = 0) 800 V VEBO Emitte-base voltage (IC = 0) 10 V IC Collector current 24 A ICM Collector peak current (tP 5ms) 36 A IB Base current 12 A IBM Base peak current (tP 5ms) 18 A PTOT Total dissipation at Tc = 25°C 200 W TSTG Storage temperature -65 to 150 °C TJ Max. operating junction temperature 150 °C Table 2. Thermal data Symbol Parameter Value Unit RthJ-C Thermal resistance junction-case max 0.625 °C/W HD1750JL Electrical characteristics 3/10 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE = 1700V VCE = 1700V; TC = 125°C 0.2 2 mA mA IEBO Emitter cut-off current (IC = 0) VEB = 5V 10 µA VCEO(sus) (1) 1. Pulsed