M3-1296规格抛光单晶硅蓝宝石基片.pdf

SEMI M3-1296 N/A © SEMI 1978, 1996 SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE SAPPHIRE SUBSTRATES 1 Preface F 154 — Practices and Nomenclature for Identification of Structures and Contaminants Seen on Specular Sili- 1.1 These specifications cover requirements for four con Surfaces sizes of monocrystalline high-purity polished sapphire substrates used for silicon growth and subsequent F 523 — Practice for Unaided Visual Inspection of semiconductor device manufacture. Dimensional and Polished Silicon Slices crystallographic orientation characteristics are the only F 533 — Test Method for Thickness and Thickness standardized properties set forth below. A purchase Variation of Silicon Slices specification may require that additional physical prop- erties and allowable levels of bulk and surface defects F 534 — Test Method for Bow of Silicon Slices be defined. These properties are listed, together with 2 2.2 Other Standard test methods suitable for determining their magnitude. ANSI/ASQC Z1.4-1993 — Sampling Procedures and 1.2 These specifications are directed specifically to Tables for Inspection by Attributes sapphire substrates with one polished surface. Sub- strates polished on both sides, or unpolished, or with 3 Selected Definitions epitaxial deposits, are not covered; however, purchas- er