Novel Ultra-Sensitive Detectors in the 10–50 μm Wavelength Range 英文参考文献.docVIP

Sensors 2010, 10, 8411-8423; doi:10.3390/s100908411 OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Review Novel Ultra-Sensitive Detectors in the 10–50 μm Wavelength Range Takeji Ueda 1,2,* and Susumu Komiyama 2 1 CREST, Japan Science and Technology Agency/5 Sambancho, Chiyoda-ku, Yokyo, 102-0075, Japan 2 Department of Basic Science, the University of Tokyo/3-8-1 Komaba, Meguro-ku, Tokyo, 153-8902, Japan; E-Mail: skomiyama@thz.c.u-tokyo.ac.jp * Author to whom correspondence should be addressed; E-Mail: ueda@iis.u-tokyo.ac.jp; Tel.: +81-3-5454-6960; Fax: +81-3-5454-6960. Received: 29 July 2010; in revised form: 13 August 2010 / Accepted: 31 August 2010 / Published: 8 September 2010 Abstract: We have developed novel single-photon detectors in the 10–50 μm wavelength region. The detectors are charge-sensitive infrared phototransistors (CSIPs) fabricated in GaAs/AlGaAs double quantum well (QW) structures, in which a photo-generated hole (+e) in the floating gate (upper QW) modulates the conductance of a capacitively-coupled channel located underneath (lower QW). The excellent noise equivalent power (NEP = 8.3 × 10?19 W/Hz1/2) and specific detectivity (D* = 8 × 1014 cm Hz1/2/W) are demonstrated for 15 micron detection up to 23 K, which are by a few orders of magnitude better than those of other state-of-the-art high-sensitivity detectors. The dynamic range exceeds 106 (~aW to pW) by repeatedly resetting the accumulated holes in the upper QW. Simple device structure makes the detectors feasible for array fabrication: Furthermore, monolithic integration with reading circuits will be possible. Keywords: terahertz detector; far-infrared detector; ultra-sensitive detector; photon-counter; single-photon detector; charge-sensitive infrared phototransistor (CSIP) 1. Introduction Terahertz (THz, ranging 0.3 THz–3 THz in frequency, or 100 μm–1 mm in wavelength) and far infrared (FIR, ranging 20 THz–430 THz, or