Sputtered Modified Barium Titanate for Thin-Film Capacitor Applications 英文参考文献.docVIP

Materials 2012, 5, 575-589; doi:10.3390/ma5040575 OPEN ACCESS materials ISSN 1996-1944 /journal/materials Article Sputtered Modified Barium Titanate for Thin-Film Capacitor Applications Glyn J. Reynolds 1,*, Martin Kratzer 2, Martin Dubs 2, Heinz Felzer 2 and Robert Mamazza 2 1 Oerlikon USA, Inc., Business Unit Systems, 970 Carillon Dr., Suite 300, St. Petersburg, FL 33716, USA 2 OC Oerlikon Balzers AG, Business Unit Systems, Iramali 18, P.O. Box 1000, LI-9496 Balzers, Liechtenstein; E-Mails: martin.kratzer@ (M.K.); martin-dubs@bluewin.ch (M.D.); heinz.felzer@ (H.F.); robert.mamazza@ (R.M.) * Author to whom correspondence should be addressed; E-Mail: glyn.reynolds@; Tel.: +1-727-290-2625; Fax: +1-727-290-2626. Received: 3 March 2012; in revised form: 26 March 2012 / Accepted: 28 March 2012 / Published: 10 April 2012 Abstract: New apparatus and a new process for the sputter deposition of modified barium titanate thin-films were developed. Films were deposited at temperatures up to 900 °C from a Ba0.96Ca0.04Ti0.82Zr0.18O3 (BCZTO) target directly onto Si, Ni and Pt surfaces and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Film texture and crystallinity were found to depend on both deposition temperature and substrate: above 600 °C, the as-deposited films consisted of well-facetted crystallites with the cubic perovskite structure. A strongly textured Pt (111) underlayer enhanced the (001) orientation of BCZTO films deposited at 900 °C, 10 mtorr pressure and 10% oxygen in argon. Similar films deposited onto a Pt (111) textured film at 700 °C and directly onto (100) Si wafers showed relatively larger (011) and diminished intensity (00?) diffraction peaks. Sputter ambients containing oxygen caused the Ni underlayers to oxidize even at 700 °C: Raising the process temperature produced more diffraction peaks of Ni