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掺杂对LiF材料发光性能的调制作用与空位效应
Abstract
Lithium fluoride (LiF) has been widely used in various technological
applications such as in x-ray monochromators, as a filter for ultraviolet radiation, and
in thermoluminescent (TL) dosimetry. Owing to its highest sensitivity, especially, LiF
co-doped with Mg, Cu and P stimulated extensive interest in the radiation dosimetry
in the past decades. However, there are no consistent views about impurity Cu and P
on the roles of TL properties. Some authors proposed that Cu acts as a luminescent
center, while others take the opposite view. As for Cu impurity, its ion size (0.96 Å) is
larger than that of Li+ (0.68 Å). It was usually thought that LiF cannot be doped with
Cu+ Under irradiation, on the other hand, there exists a common defect of Li
,
vacancy (VLi) and thus a complex defect of Cu-VLi dipole may be introduced in the
doping system. The impurity P may also affect Cu to doping in LiF. The complex
defects may play an important modulation role on TL sensitivity. Our results provide
corresponding theoretical basis for controllable doping in experiments. The main
works are as follows:
(1) We present a detailed investigation on LiF:Cu in the presence of VLi by using
first-principles method. The defect structure has been determined from the formation
energy. It is shown that the presence of VLi leads to a decrease of the formation
energies of Cu, in favor of Cu doping into LiF. The electronic structure and optical
properties of the doped system were systematically studied, which can be largely
modulated by VLi . A new absorption peak is obtained at 9.3eV in LiF:Cu with an
adjacent VLi to Cu, which is in good agreement with experimental observation.
(2) Based
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