自旋转移力矩磁隧道结的建模与仿真.pdfVIP

电子技术研发 Electronics R D 电 8教术 ELECTRONIC TECHNOLOGY 10.3969/j .issn.l 000-0755.2015.03.001 自旋转移力矩磁隧道结的建模与仿真 曾剑铭沈海斌 (浙江大学超大规模集成电路设计研究所) 摘要:自旋转移力矩磁隧道结(ST下MTJ) 是一种新兴的非易失性存储单元。因为有着掉电后数据不 丢失、无限的写次数、与CMOS工艺兼容、不会增加器件面积以及良好的可缩放性等诸如多优点而得到了 广泛的研究。但是由于目前的工艺厂商尚未推出相应的模型，研究者难以先期使用该技术进行电路设计。 文章介绍了STT-MTJ的工作原理，详细研究了使用Verilog-A对STT-MTJ建模的思路，并在HSPICE中进行了 仿真验证，为后续的ST下MTJ研究奠定了基础。 关键词z 自旋转移力矩磁隧道结:非易失性存储; Verilog-A; 建模 Modeling and Simulation of Spin-Torque-Transfer 岛fagnetic Tunnel Junction Zeng Jianming Shen Haibin (Institute ofVLSI Design, Zhejiang University) Abstract: Spin-Torque-Transfer Magnetic Tunnel Junction is one of the new emerging non-volatile memory elements. Due to its advantages of non-volatility, infinite endurance, compatibility with CMOS , no area overhead, and good scalability, it is widely researched. However, because the process using STT-MTJ has not been commercial and there is no models provided by manufacturers , researchers are harder to design circuit using STT-MTJ. The paper introduces the working principle of STT-MTJ, studies the modeling idea of STT-MTJ using Verilog-A , and simulates the proposed model using HSPICE. The proposed model can be used for STT-MTJ circuit design in the h阳re. Key words: spin-torque-位ansfer magnetic tunnel junction; non-volatile memo可; Verilog-A; modeling N 0 引言 自旋转移力矩磁隧道结(ST下MTJ) 是一种新兴 白白层 的非易失性存储单元。因为有着掉电后数据不丢失、 革H七E丑 无限的写次数、与CMOS工艺兼容、不会增加器件