Ar气流量对石墨表面CVD TaC涂层生长与表面形貌的影响.pdfVIP

学兔兔 第l5卷第5期 粉末冶金材料科学与工程 2010年l0月 VbI．15 NO．5 Materials Science and Engineering of Powder Metallurgy Oct．2010 Ar气流量对石墨表面CVD TaC涂层生长 与表面形貌的影响 张 帆，李国栋，熊 翔，陈招科 (中南大学 粉末冶金国家重点实验室，长沙 410083) 摘 要：用C3H6作为碳源气，Ar作为稀释气体和载气，TaCI5为钽源，采用化学气相沉积法(chemical vapordeposition， CVD)在高纯石墨表面制备TaC涂层。采用x射线衍射(XRD)和扫描电镜(SEM)等对涂层进行表征，研究1 000℃ 下稀释气体(Ar)流量对TaC涂层成分、织构及表面形貌的影响。结果表明：随着稀释气体流量增大，表面均匀性 和光滑度提高，晶粒尺寸减小，晶体择优取向降低，沉积速率减小，涂层中c含量增多。当稀释气体流量为100 mL／min时，TaC涂层晶粒尺寸与沉积速率分别为32．5 am和0．60 I．tm／h；而当稀释气体流量增大到600 mL／min时， 涂层晶粒尺寸与沉积速率分别下降到21 am和0．25~tm／h。 关键词：TaC：化学气相沉积；稀释气体流量；择优取向 中图分类号：TB332 文献标识码：A 文章编号：1673—0224(201o)5．484—07 Effect of flow rate argon gas on growth of CVD TaC coatings and surface morphology ZHANG Fan，LI Guo—dong，XIONG Xiang，CHEN Zhao—ke (State Key Laboratory ofPowder Metallurgy，Central South University，Changsha 41 0083，China) Abstract：TaC coating was prepared on the surface ofpure graphite by CVD method in which C3H6 is source of C，Ar are dilute gas and carrier gas and TaC15 is the source of Ta．The effect of flow rate of Ar gas dilution on coating composition， texture and surface morphologies of the deposition at 1 000℃were investigated with XRD and SEM．It shows that the surface homogeneity and smoothness are improved，grain preferred orientation，grain size and reaction rate are decreased， and the content of C is increased with the increasing of flow rate of Ar gas．The grain size and deposition velocity of TaC coating pr