真空蒸发镀膜厚均匀性分析.docxVIP

目录中文摘要3英文摘要51引言61.1 真空镀膜的意义61.2真空镀膜技术在国内外的发展现状71.3薄膜均匀性的重要性81.4课题的研究背景91.5设计要解决的问题92蒸发源结构的设计93 真空室结构的设计124 MATLAB部分134.1 MATLAB语言特点134.2 数学模型的建立154.4 研究影响膜厚均匀性的蒸发源孔各因素174.4.1 膜厚均匀性与一个方向上蒸发源孔数量的关系174.4.2 蒸发源与基片距离为100mm时均匀度与孔排列的关系。214.4.3 蒸发源在X与Y两个方向同时增加孔的数量时对膜厚均匀性的影响。224.4.4 蒸发源上孔径变化时对膜厚均匀度的影响254.4.5 进一步增加孔的数量对膜厚均匀度的影响。264.5 总结33致谢34参考文献35真空蒸发镀膜厚均匀性分析摘 要：本文对真空蒸发镀膜厚均匀性与蒸发源孔的数量，排列，大小的关系进行了分析。在一个蒸发源上打多个孔，每个孔看做一个点蒸发源，膜厚符合余弦分布。根据余弦分布的数学模型，通过matlab模拟，研究膜厚均匀性与蒸发源孔数量、蒸发源孔排列、蒸发源与基片间距离、蒸发源与蒸发源孔径大小的关系，寻找一种在保证材料利用率的情况下提高膜厚均匀性的方法。在20*10mm蒸发源上孔数量由一个到四个时，孔的均匀性随孔数量的增加而提高。优化孔的排列可以显著提高膜厚均匀性。在蒸发源与基片距离小于100mm时，增加距离可以显著提高均匀性，但当蒸发源孔数量较多时，存在一个均匀性极值，即在某一距离上均匀性较好，增加距离或减少距离会降低均匀性。在蒸发源与基片距离大于100mm时，各种蒸发源蒸镀的膜厚均匀性均在3%以内。在10*20蒸发源板上进行模拟，通过优化3*5蒸发源孔的配置可以在蒸发源基片距离为5mm的情况下把膜厚均匀性控制在20%以内。通过优化9*9蒸发源孔可以在20mm*10mm的基片上膜厚均匀性可以控制在2%以内。关键词：膜厚均匀性；蒸发源孔配置；蒸发源与基片距离；Abstract：In this paper, the vacuum evaporation coating thickness uniformity and the evaporation source hole number, arrangement, size of the relationship are analyzed. On an evaporation source multiple holes, each hole evaporation as a point source, the film thickness in accordance with the cosine distribution. According to a cosine distribution mathematical model, through matlab simulation, research on film thickness uniformity and the evaporation source hole number, hole evaporation source arrangement, the distance between the evaporation source and the substrate, the relationship between evaporation source and the evaporation source aperture size, look for a guarantee under the condition of material utilization method to improve film thickness uniformity. Evaporation source in 20 * 10 mm hole number from one to four, the uniformity of the hole with the increase of the pore number and improve. Optimizing the arrangement of holes can significantly improve the film thickness uniformity. In evaporation source and the substrate distance less than 100 mm, the distance can significantly improve uniformity, but when the evaporation source hole quanti