双栅氧氧化前湿法刻蚀、清洗工艺对薄氧化层CMOS器件性能的影响及其优化.pdfVIP

A b str a ct Th e w et c lean ing proce ss of sem icondu ctor w afer s ha s b ecom e on e of th e m o st cr itica l op er a t ion s in th e fabr ica t ion o f sem icon du ctor dev ices, esp ec ia lly advanced U LS I silicon c ircu its. W et c lean ing process inc lude w et etch ing, w et pr e c lean ing, w et photore sist str ipp ing, and dep end ing on the deta il requ irem en t of process f low in th e fabr ica tion of in tegra ted c ir cu its，they ex ist in th e Fron t-End-O f-L ine an d Back-End—Of-L in e bo th. In the advanced CM OS c ir cu it techno logy, dua l ga te ox ida t ion process is m or e p opu lar, b ecau se of its improvem en t in th e integrat ion of d ifferent dev ice s w h ich w ork w ith d ifferen t vo ltage， su ch a s h igh vo ltage for tran sp ortat ion an d low vo ltage for log ica l ca lcu la t ion. A dua l ga te ox ida t ion process form s tw o a ct ive ar ea s w ith d iffer en t gate ox ide th ickness through wet etching and 2nd ox idation. The th ick oxide for the h igh vo ltage w ork area , and the th in for th e low . Ther e are tota l 4 step s w et pr ocesses in th e dua l ga te ox ida t ion f low : the pr e c lean in g pr oce ss before the 1st and 2nd ox idation, wet etch ing for the low voltage work area ox ide, and w et photor e sist str ipp ing after w et e tch ing. B e ing d iffer en t w ith th e w et proce ss for oth er purp o se, a ll ch em ica l process in th e du a l gate ox ida t ion f low w ill a ttack the th ick gate ox ide and silicon at sam e t im e, in w here a th in ox ide w ill grow . A ll rea ction show s ign if icant inf luence for the prop er ty of CM OS dev ise, espec ially for the prop er ty o f ga te ox ide. In th is the s is, a ll r esear ch focus on the w et proce ss b etw een tw o ox idat ion step s, the ch