AgBi3S5三元硫化物的合成和输运性质.pptVIP

-360 -153 83 The PF value of the present AgBi3S5 bulk material increases from 124 to 221μWm-1K-2 with raising temperature from 323 to 573 K, which are slightly lower than that (about 144-263μWm-1K-2)of the reported AgBi3S5materials at temperatures ranging from 300 to 575 K. The σ gives more contribution to the PF than that of the ?. Fig. 7. Temperature dependence of the thermal diffusivity D (a), specific heat Cp (b)the carrier thermal conductivity κ (c) and the ratios of κlattice/κ(d) for the bulks obta-ined by applying SPS for 5 min at 673-873 K. The D values for all the samples at 573 K present ascending trend with raising sintering temperature, in which the D values of the Bulk-873 decrease from 0.508 to 0.400 mm2 s-1 with raising temperature from 323 to 573 K. The dominant mechanism is the phonon scattering. The k value of the present pure AgBi3S5 bulk material decreases from 0.70 to 0.64 W m-1K-1 with raising temperature from 323 to 573 K, which is the lowest value reported so far for this material.The lowered k is attributed to the increased porosity (Fig. 5). which is concluded that the total κ should be extremely relative to the κL.Hence, the acoustic velocity would be slacked via porous microstructure which performs as a good thermal b-arrier and resultantly decreases the κL of the present AgBi3S5 materials. Fig. 8. Temperature dependence of the figure of merit (ZT) for the bulks obtained by applying SPS for 5 min at 673e873 K. which is owing to the increased PF (Fig.6(c)).The ZT value also increases with raising sintering temperature, thereby the highest ZT value reaches 0.20 for the bulk AgBi3S5 obtained by appl-ying SPS at 873 K for 5 min. 小结 结合机械合金化方法（MA）和放电等离子体烧结法（SPS）合成近 单相 的AgBi3S5多晶。 纯AgBi3S5是n型热电材料。室温下，具有相对较好的电导率:178Scm-1， 当温度增加到573K时，减少到79 Scm-1，表现出半金属特性。 AgBi3S5室温下的seebeck系数大约是-83 μV K-1 ，其绝对值在573K是增 加到167 μV K-1 ，同电导率相比，表现出相反的温度依赖性。 573K是得到最大的PF值:221 μWm-1K-2，热导率从0.7降到0.64 Wm-1K-1