IK7N60I TO251 规格书.pdf

IK7N60I N channel 600V MOSFET Features Description • RDS(on) ≦1.1Ω ( Max.)@ VGS = 10V The IK7N60I N-Channel enhancement mode silicon gate • Low Gate Charge ( Typ. 28nC) power MOSFET is designed for highvoltage, high speed power • Fast Switching switching applications such as switching regulators, • Fast switching capability switchingconverters, solenoid, motor drivers, relay drivers. • Avalanche energy specified • Improved dv/dt capability Pin configuration Order Number Package IK7N60I TO-251 Maximum Ratings Tc = 25℃ unless otherwise noted* Parameter Symbol Ratings Units Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Tc=25℃ 7* A Continuous Drain Current ID Tc=100℃ 5.1* A Pulsed Drain Current IDM 29 A Tc=25℃ 60 Power Dissipation PD W Derate above 25°C 0.48 Operating Junction and Storage Temperature Range TJ,Tstg -55~+150 ℃ *Dran current limited by maximum junction temperature Thermal Characteristics Parameter