CET的MOS管S2302.pdfVIP

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  • 2017-05-29 发布于河南
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CET的MOS管S2302

CES2302 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.0A, RDS(ON) = 55mΩ (typ) @VGS = 4.5V. RDS(ON) = 82mΩ (typ) @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. D Rugged and reliable. SOT-23 package. G

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