半导体硅的Seebeck系数和电阻率测量_赵伟.pdfVIP

26 　Vol. 17　No. 1　2007 Seebeck 赵　伟　侯清润　陈宜保　何元金 (清华大学物理系, 北京　100084) (:2006-0-6 14) 　　本文介绍了半导体硅的Seebeck 系数和电阻率的测量, 与Hall 系数和电阻率测量实 验相对 , 从另 一个方面了解半导体导电性能的一些特征. 由Seebeck 系数的正负号 确定载流子的类型是P 型还是N 型. 半导体内有两种导电机制:杂质导电和本征导 电. 在杂质导电区, 可以确定晶格散射因子;在本征导电区, 可以确定硅的禁带宽度. 　半导体硅;Seebeck 系数;电阻率 SEEBECK COEFFICIENT AND ELECTRICAL RESISTIVITY OF SILICON Zhao Wei 　Hou Qing un　Chen Yibao　He Yuanjin (Department of Physics, singhua University, Beijing　100084) Abst act　 he experimental method and results of measuring the Seebeck coefficient and elec- tric resistivity of semiconductor silicon are introduced. Similar to the measurement of Hall co- efficient, some conduction properties of silicon could be understood from Seebeck coefficient in another perspective. he charged carriers could be distinguished to be P-type or N-type ac- cording to the sign of the Seebeck coefficient. wo conduction mechanisms, impurity conduc- tion and intrinsic conduction, are found in semiconductor. he lattice scattering factor in the impurity conduction region and the forbidden band width of silicon in intrinsic conduction re- gion could be determined. Key Wo ds　semiconductor silicon;Seebeck coefficient;resistivity β- 1　 FeSi2 MnSi1. 73 . (300 ～700 ℃) , . , , 、 . , See- . beck . . , Seebeck 、 . Seebeck [5] 、、