热处理对AlN陶瓷的热导率及介电性能的影响-硅酸盐学报.doc

热处理对AlN陶瓷的热导率及介电性能的影响 何秀兰1，施磊1，巩庆东1，郭英奎1，叶枫2 1. 哈尔滨理工大学材料科学与工程学院，哈尔滨 1500402. 哈尔滨工业大学材料科学与工程学院，哈尔滨 150001 关键词：热处理；氮化铝陶瓷；热导率；介电性能 图书分类号：TQ174.75 文献标志码：A 文章编号：0454–5648(2015)09– – 网络出版时间: 网络出版地址： Effect of Heat Treatment on Thermal Conductivity and Dielectric Properties of AlN Ceramics HE Xiulan1，SHI Lei1，GONG Qingdong1，GUO Yingkui1，YE Feng2 (1. School of Materials Science and Engineering, Harbin University of Science and Technology, Harbin 150040, China; 2. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China) Abstract: Aluminum nitride (AlN) ceramics prepared by a fast spark plasma sintering method were heat-treated by a vacuum pressureless sintering method. Effect of sintering additive on the phase composition, microstructure, thermal and dielectric properties of AlN ceramics during high-temperature heat treatment process was investigated. The results show that the heat treatment enhances the growth of AlN grains and the distribution of secondary phases. Compared to AlN ceramics with single rare earth oxide, the thermal conductivity and dielectric loss of AlN ceramics with earth oxide-CaF2 multiple sintering additive are improved due to the effects of effective removing oxygen and forming evaporable secondary phases. Key words: heat treatment; aluminum nitride ceramics; thermal conductivity; dielectric property 氮化铝(AlN)陶瓷具有电阻率高、导热性好、介电性能适中及无毒等优异性能，在微电子行业备受关注[ 1–2]。由于AlN属于强共价键性化合物，难于制备高致密烧结体。放电等离子烧结技术 (Spark plasmas sintering，SPS)具有普通烧结方法无可比拟的优越性，可以快速实现陶瓷粉体的致密化过程[3–4]。目前，研究者已将SPS技术应用于制备Si3N4、B4C及SiC等各种材料，并取得众多研究 成果[5–8]。部分研究者尝试采用SPS技术烧结AlN陶瓷，通过引入各种烧结助剂及优化工艺参数，实现AlN陶瓷显微组织调控及快速致密化。 Qiao等[9]采用SPS技术在1 600 ℃、未引入烧结助剂的情况下，制备的AlN陶瓷密度达到3.25 g/cm3。由于未有效去除材料中的氧杂质，材料的热导率较低。Li等[10]通过引入稀土烧结助剂(Dy2O3、Er2O3及Y2O3等)，采用SPS技术制得的AlN陶瓷热导率最高为110 W/(m·K)。Khor等[11]采用SPS制备了以Sm2O3为烧结助剂的AlN陶瓷，并深入研究了介电性能，发现介电常数比热压烧结的AlN陶瓷低。目前，在利用SPS烧结AlN陶瓷材料引入烧结助剂方面的相关研究还未有统一定论。另一方面，通过优化工艺参数，改善AlN的导热性能，降低介电损耗，有望将AlN应用于需电阻率高、导热性好及介电损耗低的微波窗及防