薄膜与表面分析技术在高效大功率LED生长和工艺控制中的应用.ppt

* LEDN-01 高效大功率LED外延及芯片技术研讨班 Thin film and Surface Analysis for LED growth and process 薄膜与表面分析技术在高效大功率 LED生长和工艺控制中的应用 Yumin Gao Applied Microanalysis Labs, Inc. 2990 Scott Blvd., Santa Clara, CA 95054 GAO@AM-L.COM LEDN-02 Analysis Techniques Sample Probe Response Modified Probe Probe: photo Response: photo electron electron ion ion phonon phonon Analysis Techniques phonon photo photo XRF, TXRF, FTIR, Raman electron electron ion ion phonon SIMS, RBS, ISS, GDMS Scanning Acoustic Microscopy ESCA EDS PIXE, GDOS SEM, TEM, AES, EELS LAMMA LEDN-03 LEDN-004 Analysis Techniques Elemental Molecular Surface ( 10 ?) Thin film ( 100 ? - 1?m) Bulk ( 10?m) Types of information provided by chemical analysis LEDN-005 Surface and Thin film Analysis Surface Thin Film Elemental Molecular TXRF EDS RBS AES ESCA SIMS 100% 100 ppm 1% 1 ppm XRF ESCA AES RBS SIMS EDX 100? 10 μm 0.1 μm 1 μm 1 μm 0.1 μm 10 μm 100 μm 1 mm VD D E SENSITIVITY SPATIAL RESOLUTION QUANTITATION DEPTH RESOLUTION LEDN-006 SIMS vs. Other Techniques LEDN-07 Analysis Principle K (1s) L1(2s) L 2,3(2s) Atom Ion e- h? Excitation Photoelectron Eb= h?-Ek-? Relaxtation h? ESCA EDS, XRF AES Auger electron KL1L 2,3 LEDN-08 Analysis Principle 10-100 ? electron escape depth 1?m Electron excitation depth Auger electrons (surface) X-ray fluorescence Primary Electrons 10-100 ? electron escape depth 100-1000 ?m X-ray excitation depth photoelectrons (surface) X-ray fluorescence Incident X-rays X-ray fluorescence (surface) Incident X-rays TRXF Depth information determined either by excitation depth or by escape depth LEDN-09 + + + Primary ions (~10 keV) Sample atoms Absorbed molecules Sputtered atoms SIMS Principle + + - + + Secondary ions Mixing range (~100 ?) Escape range (~10 ?) Desorbed molecular ions Sputtering event LEDN-10 SIMS Technique Schema ION SOURCE Sample MASS SPECTROMETER DETECTOR m/q MASS SPECTRUM ?m DEPTH PROFILE X-Y IMAGE