IRG4PC50UD资料.docVIP

PD 91471B IRG4PC50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C ? UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, 200 kHz in resonant mode ? Generation 4 IGBT design provides tighter UltraFast CoPack IGBT VCES = 600V VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3 ? IGBT co-packaged with HEXFREDTM ultrafast,  ultra-soft-recovery anti-parallel diodes for use in  bridge configurations ? Industry standard TO-247AC package Benefits ? Generation 4 IGBTs offer highest efficiencies a