冰盘化学机械抛光单晶砷化镓片的机理及工艺研究.pdfVIP

扬州人学硕十学忙论文 点的平均粗糙度值为5．Olnm。 关键词：单晶砷化镓片，脆塑转变，纳米氧化硅磨料冰盘，冰盘化学机械抛光，表面羊R糙 度 沈兆伏 冰盘化’7；42Jt械抛光单品砷化镓片的机理及l：艺研究 Abstract arsenideisanewsemiconductormaterialhas after Singlecrystalgallium developed andsilicon．Itisoneofthe germanium most andmostmature important compound semiconductor usedinthefield andmicroelectronics． materials，mainly ofoptoelectronics Galliumarsenideis hardandbrittlethathaslow the typical plasticity．Useordinary and leadtobrittlecrackremovalwithoutobviousshear processingtechnologyparametersonly flow likethemetal．Whenthe force istoo materialwill phenomena cutting high，the undergo brittle willaffectthe and ofthesurface． fracture，which qualityintegrity Forcharacteristicsof of arsenide ultra-precisionmachiningsinglecrystalgallium chip，the CMP of arsenidewithnano—silicaabrasive freeze processsinglecrystalgallium chip system pad was contentof of studied，the cutting frozennano—silica process，pre-processing，preparation abrasive and ice werediscussed．The of GaAsfilms pad polishing pre—processingsinglecrystal includes andabrasivechemicalmechanical the work grinding polishing．Whenmajorcompleted， theachievementincludethese： 1．In the of