Infineon cool MOSFET产品技术推测.pptVIP

Copyright ? Infineon Technologies 2010. All rights reserved. Copyright ? Infineon Technologies 2009. All rights reserved. Infineon cool MOSFET介绍 * * History of CoolMOS? Product from S5 to C6/E6 CFD2 S5 series: the first series of CoolMOS?, market entry in 1998 slow switching, close to conventional MOSFET, Vth 4.5 V, Gfs low, Rg high design-in in high power SMPS only C3 series: the third series of CoolMOS?, market entry in 2001 the ?working horse“ of the portfolio, fast switching, symmetrical rise/fall time @10 V Vgs, Vth 3 V, Rg very low design-in into all CoolMOS? segments CFD series: the fourth series of CoolMOS?, market entry in 2004, fast body diode, Qrr 1/10th of C3 series, Vth 4 V, Rg low specific for phase-shift ZVS and DC/AC power applications CP series: the fifth series of CoolMOS?, market entry in 2005, ultra low Rdson, ultra low gate charge, very fast switching Vth 3 V, internal Rg very low C6/E6 series: launched in 2009 and 2010 respectively as the sixth CoolMOS? technology is planned to be the successor of C3 CFD2 series: the first 650 V superjunction technology with integrated fast body diode on the market and Significant Qg reduction compared to previous CFD technology The choice of cool MOS in Soft-switching/Hard-switching application Resonant topologies Hard switching topologies CFD2 CFD Resonant topologies Resonant topologies Hard switching topologies Hard switching topologies 199 m? 660 m? 3000 m? Server, Telecom, Solar, UPS PC Power, Adapter, LCD/PDP Lighting, Adapter CFD2 C6 C6 CP C6 C3 CP C3 CFD RdsON [ m?] CP C3 2009 2011 year CFD2A CFD2A CP technology is recommended for hard switching. CFD2 technology is recommended for soft switching. CFD2A series is automotive qualified parts. C6/E6 technology is usable for hard and soft switching Infineon cool MOSFET技术发展介绍 备注：Infineon cool MOSFET产品另两款产品E6（与C6同一技术，但Rg较小）和CFD2（对比CFD主要改善了Qg）！ 第一代为S5/C2，采用7层外延，比电阻为33m??cm 第二代为C3，采用6层外延，比电阻为33m??cm 第三代为CS/CP，采用7层外延，cell pitch减小，比电阻为25m??cm 第三代为CS/CP，采