- 1、本文档共7页,可阅读全部内容。
- 2、原创力文档(book118)网站文档一经付费(服务费),不意味着购买了该文档的版权,仅供个人/单位学习、研究之用,不得用于商业用途,未经授权,严禁复制、发行、汇编、翻译或者网络传播等,侵权必究。
- 3、本站所有内容均由合作方或网友上传,本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺!文档内容仅供研究参考,付费前请自行鉴别。如您付费,意味着您自己接受本站规则且自行承担风险,本站不退款、不进行额外附加服务;查看《如何避免下载的几个坑》。如果您已付费下载过本站文档,您可以点击 这里二次下载。
- 4、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等,请点击“版权申诉”(推荐),也可以打举报电话:400-050-0827(电话支持时间:9:00-18:30)。
查看更多
以堆叠式闸极介电层实现具有优异电流趋动能力与可靠度之高效能鳍
1
02
Enhanced FinFET Performance by Stacked
Gate Dielectric Featuring Higher Current Drive
Capability and Superior Reliability
(HK Dielectric) 20nm
(FinFET)
20 %-22 % (Drive Current) ~22% (Transconductance, gm)
4% ~33%
(EELS) X (XPS)
(Oxygen Vacancy)
(Bias Temperature Instability, BTI) (Lifetime Test)
Abstract
HK-2/HK-1 stacked dielectric was proposed as the gate dielectric for sub-20 nm FinFET technology.
Compared to single HK-1 dielectric, the stacked gate dielectric exhibits superior performance in terms
of improved drive current by 20~22% and increased transconductance by ~22%. The main reason
accounting for the better performance, besides the higher gate capacitance by 4%, is the enhanced
carrier mobility by ~33% resulting from less remote scattering due to smaller amount of charged
oxygen vacancies which was physically confirmed by EELS and XPS. Owing to the reduced oxygen
vacancies, from bias temperature instability and lifetime test, the stacked gate dielectric demonstrates
NANO COMMUNICATION 23 No. 2
03
augmented reliability as well. Most importantly, HK-1 and HK-2 are common dielectrics completely compa
文档评论(0)