绝缘层上矽分析及应用SilicononInsulator-明新科技大学图书馆.PDFVIP

32 pp.103-115 Volume 32, Minghsin Journal, August 2006 ∗ 金Silicon on Insulator MOS 行理論利 Silvaco TCAD 參數200Å 500 Å 1000 Å 2000 Å 度 (SOI MOS)金(Bulk MOS)異 率量漏流 不度金漏流 率度(Threshold Voltage) 度 金漏流 率 Silicon on Insulator Analysis and Application Chii-Wen Chen Wei-Qi Chen Department of Electronic Engineering, Minghsin University of Science and Technology Abstract This is a research about Silicon on Insulator MOS, and then using Silvaco TCAD program to do electricity parameter simulation. In this article, we will use four thickness of Silicon on Insulator MOS: 200 Å , 500 Å , 1000 Å and 2000 Å, and compare between the Bulk MOS in the electricity parameter and application. In which, the advantage of Silicon on Insulator MOS – the measure of low power cost is to confer the leakage current number. We will take it to compare with the SOI MOS and Bulk MOS at different SOI thickness in near environment, and the leakage current is smaller that the opposite power cost is smaller. At the device performance, we major in accordance with Threshold Voltage (Vt) and the parasitic capacitance ,and the threshold voltage or the parasitic capacitance is smaller that the opposite performance will better . It is one of the advantages of Silicon on Insulator MOS. Keyword Silicon on Insulator Metal Oxide Semiconductor Leakage Current Power Cost 年來金MOS 便 金金路金 ∗ 路 1 Tel 03-5593142 E-mail cwchen@must.edu.tw 32 , Volume 32, Minghsin Journal 103 parasitic capacitance 度路度 路降不度 率綠律說 率 年來Silicon o