G20N60资料.pdf

HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode o • 40A, 600V at TC = 25 C The HGTG20N60B3D is a MOS gated high voltage o • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150 C switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input • Short Circuit Rated impedance of a MOSFET and the low on-state conduction • Low Conduction Loss loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o o • Hyperfast Anti-Parallel Diode C and 150 C. The diode used in anti-parallel with the IGBT is the RHRP3060. Packaging The IGBT is ideal for many high voltage switching JEDEC STYLE TO-247 applications operating at moderate frequencies where low E conduction losses are essential. C G Formerly developmental type TA49016. Ordering Information PART NUMBER PACKAGE BRAND