N02L63W2AT25I;N02L63W2AB25I;中文规格书,Datasheet资料.pdfVIP

N02L63W2A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit Features • Single Wide Power Supply Range Overview 2.3 to 3.6 Volts • Very low standby current The N02L63W2A is an integrated memory device 2.0µA at 3.0V (Typical) containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device • Very low operating current is designed and fabricated using ON 2.0mA at 3.0V and 1µs (Typical) Semiconductor’s advanced CMOS technology to • Very low Page Mode operating current provide both high-speed performance and ultra-low 0.8mA at 3.0V and 1µs (Typical) power. The device operates with two chip enable • Simple memory control (CE1 and CE2) controls and output enable (OE) to Dual Chip Enables (CE1 and CE2) allow for easy memory expansion. Byte controls Byte control for independent byte operation (UB and LB) allow the upper and lower bytes to be Output Enable (OE) for memory expansion accessed independently and can also be used to deselect the device. The N02L63W2A is optimal • Low voltage data retention