以常压微波电浆制备氧化亚铜奈米线.docVIP

中文摘要 氧化亞銅(Cu2O)在可見光區的穿透係數可達80%，因此其奈米線可應用於光觸媒及提升太陽能電池轉換效率。氧化亞銅奈米線的製備，主要有低溫的化學反應法及高溫的氧氣輔助成長法，本研究則以常壓微波電漿進行前/後處理製備氧化亞銅線。 製備氧化亞銅線的方法有二：第一種，將銅網以高溫爐加熱至520 ℃退火後，再以氮氣電漿後處理。第二種，則以銅網直接進行氮/氧氣電漿前處理，再以氮氣電漿後處理。此二種方法製備之氧化亞銅線寬介於為 127 ~ 280 nm。 氧化亞銅線以掃描式電子顯微鏡及穿透式電子顯微鏡分析形貌與電子繞射圖，並經由晶面繞射面分別計算單根氧化銅線及氧化亞銅線之晶格向量。繞射結果顯示：以高溫爐退火或以氮/氧氣電漿前處理的線均以氧化銅相為主，主要晶相為 ī 1 1 及 1 1 1。除此之外，不論前處理方式為何，以 520 ~ 550 ℃ 之氮氣電漿後處理的線均轉換成氧化亞銅相，主要晶相為 1 1 1 。 英文摘要 The penetration coefficient of cuprous oxide (Cu2O) in visible ray area can reach 80%. Hence, Cu2O nanowires can be used as photocatalyst and improve the transformation efficiency of the solar energy battery. Traditionally, low-temperature chemical reaction and oxygen-assisted high-temperature growth methods are used to produce the wires. In this study, two atmospheric-pressure microwave plasma approaches were carried out for the growth of Cu2O wires. The first method was heated the copper grids at 520°C in oven for producing CuO nanowires, then annealed by nitrogen plasma. The second method was placed the copper grids in nitrogen/oxygen plasma environment for the growth of CuO nanowires and then reduced by nitrogen plasma. The results showed that the width of wires of cuprous oxide were in the range of 127 ~ 280 nm. The morphology and electronic diffraction diagram of cuprous oxide wires were analyzed by the scanning electron microscope (SEM) and transmission electron microscopy (TEM). The results revealed that the wires produced by oven and nitrogen/oxygen plasma are belonged to cupric oxide phase with main crystalline structure being ī 1 1 and 1 1 1. In addition, whatever the pre-treatment methods (oven or nitrogen/oxygen plasma) were applied, the wires after nitrogen plasma treated at 520~550℃ were transformed into cuprous oxide phase with main crystalline structure being 1 1 1. 目錄 中文摘要 Ⅰ 英文摘要 Ⅱ 誌謝 Ⅲ 總目錄 Ⅳ 表目錄 Ⅵ 圖目錄 Ⅷ 第一章 前言 1 第二章 文獻回顧 5 2-1 銅氧化物材料特性 5 2-1-1 氧化銅(Cupric Oxide) 5 2-1-2 氧化亞銅(Cuprous Oxide) 5 2-2 氧化亞銅的置備 9 2-2-1 薄膜 9 2-2-2 奈米線 11 2-