双面多孔矽结构应用于提升矽基光感测元件之性能.pdf

(modulated energy bandgap) 數 (high ressitivity) / (surface area-to-volume ratio) (bulk silicon) 論 利 來率靈 度 2V / 流 (photo-to-dark current ratio)流10 1/160 750 nm 900 nm 了不 率率 75.86% 5V/ 流(photo-to-dark current ratio)流 率 41.35% 10 1/2 2 2 950nm(40mA/cm )1000nm(20mA/cm ) 串聯 了流 了路 了流 / 流靈 度 力 v Double-Sided Porous-Si Structures for Improving Performance of Silicon-based Optical-Sensing Devices Abstract Due to its many special physical properties, including ability to increase light absorption and/or decrease light reflection, modulated energy bandgap, high resistivity, huge surface area-to-volume ratio, and the same single-crystalline structure as the bulk-Si, porous silicon (PS) is very suitable for applications in semiconductor optical devices. In this thesis, optical-sensing devices with double-sided porous silicon (DSPS) structures had been studied, in which surface PS layers served as the anti-reflection layers while back-sided PS layers were designed as the light-reflection layers to improve the optical-sensing characteristics of devices. Experimental results showed that, as compared to the devices with single surface PS layers, devices with DSPS structures got 10-time higher optical current and 160-time lower optical-to-dark current ratio with a shift of peak photo-responsivity from 750 nm to 900 nm. The influences of different porosity of the back-sided PS layers in devices’ characteristi