BSN30N沟道增强型垂直 MOS晶体管.pdfVIP

DISCRETE SEMICONDUCTORS DATA SHEET BSN304; BSN304A N-channel enhancement mode vertical D-MOS transistors Product specification April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSN304; BSN304A D-MOS transistors FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER CONDITIONS MIN. MAX. etc. VDS drain-source voltage − 300 V • High-speed switching ID DC drain current − 250 mA • No secondary breakdown. Ptot total power dissipation up to Tamb = 25 °C − 1 W ±VGSO gate-source voltage open drain − 20 V DESCRIPTION R drain-source I = 250 mA; − 8 Ω DS(on) D N-channel enhancement mode on-resistance VGS = 10 V vertical D-MOS transistor in a TO-92 V gate-source cut-off I = 1 mA; 0.8 2 V GS(off) D variant envelope, intended for use as voltage VGS = VDS a line current interruptor in telephone sets