功率MOS管烧毁的原因(外国英语资料).docVIP

功率MOS管烧毁的原因 The working state of the MOS in the controller circuit: the turn-on process (the transition from cut-off to turn-on), the turn-on state, the shutdown process (the transition from lead to the cut-off), and the cut-off state. Mos main losses also correspond to these States, switching losses (turn-on process and shutdown process), conduction loss, cutoff loss (omitted by current leakage), and avalanche energy dissipation. As long as these losses are controlled within the MOS acceptance specifications, the MOS will work properly and beyond the tolerance range, i.e., damage. And switching losses are often greater than on state losses (different MOS, this gap may be great. Mos damage is the main reason: The junction temperature of flow - induced sustained large current or transient large current high burn; The source drain breakdown voltage, and gate source breakdown; Electrostatic, electrostatic breakdown. CMOS circuits are afraid of static electricity; Mos switch principle (brief). Mos is a voltage - driven device. As long as an appropriate voltage is supplied between the gate and the source stage, the channel between the source and drain stages is formed. The resistance of this current path is MOS internal resistance, that is, on resistance Rds (on) . The size of the internal resistance basically determines the maximum conduction current that the MOS chip can withstand (of course, its related to other factors, most of all, thermal resistance). The smaller the internal resistance, the greater the current to withstand (due to small fever). The Mos problem is far from that simple. There is an equivalent capacitance between the gate and drain stages between its gate and source stages, between the source and drain stages. Therefore, the process of charging the gate voltage is to charge the capacitor (the capacitor voltage can not be mutated), so the opening process between the MOS source stage and the drain stage is controlled by the charging process of the gat