黑硅电池中你需要掌握的半导体基础工艺知识研究.ppt

x [100] y[010] How about 111 wafer? z[001] Etching stop Timed etching: not good for 10um membrane Factors determining etching rate: temperature, concentration, aging, stirring, light, wafer irregularity, surface preparation (1) V-groove technique (visual inspection: not suitable for mass production) (2) Boron (P+) etch stop 7?1019 cm-3 ? etching rate drops 50 times (EDP) 1-20 um controllable Membrane in tension (B Si) Not effective with KOH ncompatible with CMOS process membrane beam Process Design: How to make beams? wafer (p) oxidation doping patterning (HF) ion implantation diffu