VHFPECVD 制备不同衬底温度微晶硅薄膜结构研究.PDF

5 Vol.33 No. 5 2005 5 ACTA ELECTRONICA SINICA May 2005 VHFPECVD 张晓丹,赵 颖, 高艳涛, 朱 锋, 魏长春, 孙 建,耿新华, 熊绍珍 (, 300071; , 300071; , 300071) : VHFPECVD .: ,, ( X c) , .200~ 250 . 7. 1% , 1.2m, ZnO . : ; ; : TK514 : A : ( 2005) Struct ural Study of Microcrystalline Silicon Films Fabricated by VHFPECVD at Different Substrate Temperatures ZHAN Xiaodan,ZHAO Ying, AO Yantao,ZHU Feng,WEI Changchun, SUN Jian, EN Xinhua,XION Shaozhen ( I nstitute of Photoelectronics Thin Film Devices and Techni que of N ankai University , Tianj in 300071, China Key Laborat ory of Phot oelectronics Thin Film Devices and Techni que of Tianj in, Tianj in 300071, China Key L aboratory of Opt oelectronic I nf ormation Science and Technology of N ankai University , Ministry of Education, Tianj in 300071, China ) Abstract : A series of microcrystalline silicon thin films prepared at different substrate temperature (Ts) by very highfrequency plasma enhanced chemical vapor deposition were analyzed by MicroRaman spectroscopy,Fourier transform infrared spectroscopy and photo thermal deflection spectroscopy.The results showed that structure of sample evaluated from amorphous to microcrystalline and hydrogen content decreased withthe increase of Ts.Microcrystaline silicon thin films preparedbetween 200 and 250 indicated low defect density.Microcrystalline silicon solar cells with convertion efficiency 7. 1% was fabricated by VHFPECVD.Therewas no Z O