通孔刻蚀技术的应用.pdfVIP

目 录 摘：要································································1 第一章引言························································3 卜l、通4LN蚀在半导体制造中的意义····························3 卜2、通4LN蚀的背景··········································4 I-3、通4LN蚀的现状与刻蚀设备································5 I-4、奉文所研究的日的与主要内容······························6 第二章产品描述及膜层结构分析·······································7 2-I、通孔刻蚀的发展与综述····································7 2—2、通孔刻蚀过程的分析····-·············-···················8 2—3、通孔膜层结构和CD尺寸···································9 第二章通孔刻蚀条件的初步选定·······································11 3一l、氮氧化硅和氧化硅刻蚀条件的选定···························11 3-2、氧化硅刻蚀条件的选定·········-···························ll 第四章Etch Stop问题的分析与解决····································13 4—1、Etch Stop问题的分析······································13 4-2、_-E艺条件的改善············································14 第五章新条件Margin的确认···········································27 VIA确认···············································27 5—1、Top 5—2、全参数Margin对CD的影响··································28 5-3特性和良率的验证············································31 第六章监控体制的建立···············································34 6-i、日常颗粒的监控···········································34 6—2、T艺腔体刻蚀速率的监控···································35 6—3、刻蚀CD的监控············································35 6—4、KLA监控·························”·······················36 第七章总结·························································37 参考文献····························································40 致谢································································4l 摘要 本文介绍了在0．35微米平台的设备上0．18微米产品通4L亥fJ蚀条件的开发和优化。 泛应用到通孔刻蚀，通常通孔刻蚀后的CD在0．35—0．55微米之间。而本文所研究的是 在这个平台上开发通孔刻蚀后CD是O．2．加．26微米的产品。