第十三章 电子烟专用MOS PE632BA 替代AON7534、AON7508.pdf

PE632BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 4.5mΩ @VGS = 10V 53A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (T = 25 °C Unless Otherwise Noted) A PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V T = 25 °C 53 c T = 100 °C 33 Continuous Drain Current2 c ID T = 25 °C 15 A A T = 70 °C 12 A Pulsed Drain Current1 IDM 100 Avalanche Current I 37.5 AS Avalanche Energy L =0.1mH EAS 70 mJ T = 25 °C