低温微晶矽薄膜电晶体于可挠式电子元件之应用-国家奈米元件实验室.PDF

3 29 NANO COMMUNICATION 19No.1 Low Temperature Microcrystalline SiliconThin FilmTransistors for Flexible Electronics 1 1* 1 x 200 oC 280 0.17 V/decade 5 1.52 M-µm Abstract In this work, the coplanar top gate bottom source/drain in-situ doped microcrystalline (µc-Si:H) thin lm transistors (T FTs) were fabricated on t he glass subst rate. T he X-ray diff raction (X RD), scanning elect ron microscope (SEM), t ransmission electron microscopy (T EM) were used to investigate the material properties of µc-Si:H. The µc-Si:H T FT demonstrates high 2/V-S, low subthreshold swing of 0.17 V/decade and I / I ratio larger than 105 under low temperature of mobility of 280 cm on o 200 . Moreover, the output characteristic shows good electric properties with fairly low parasitic resistance of 1.52 M - µm. This device with high performance and low process temperature becomes a candidate for future display industry. Keywords Flexible Electronics Microcrystalline Silicon Thin Film Transistor 3 30 [1] [7] T 1 T2 CS T2