化学机械抛光参数对声发射特征的影响-北京声华.PDF

化学机械抛光参数对声发射特征的影响 冯超 余前程 何永勇 （清华大学机械工程系北京 100084 ） 摘要：化学机械抛光（CMP ）是实现晶圆全局平坦化的主要手段，而声发射（AE ）对材料的损伤过程非常敏感，研究 CMP 过程的声发射特征对探究 CMP 机理、监测 CMP 过程具有重大意义。本文以半导体互连材料铜为对象，研究铜 CMP 过程的声发射特征，探索 CMP 过程产生 AE 信号的机制。研究发现：随着抛光压力和抛光垫转速增加，AE 信号强度增大； CMP 过程通入的液体成分对 AE 信号有较明显的影响；AE 信号的能量主要分布在两个频段，其中高频成分能够表征 CMP 过程的划痕。 关键词：化学机械抛光；声发射；铜；划痕 中图分类号：TB535 文献标识码：A Effects of Chemical Mechanical Polishing Parameters on Acoustic Emission Characteristics FENG Chao YU Qian-cheng HE Yong-yong (The Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China) Abstract: Chemical mechanical polishing (CMP) is a dominating way to realize global planarization of wa- fers, and acoustic emission is very sensitive to material damage. So it is of great significance to investigate acous- tic emission characteristics during CMP for CMP mechanism research and process monitoring. Here acoustic emission characteristics and signal generating mechanism during CMP were studied using copper, a kind of in- terconnection material of semiconductors. The results demonstrate that the intensity of acoustic emission signal increases with the increase of polishing pressure and pad rotational speed. The signal is obviously influenced by the ingredient of liquid pumped in as well. Besides, signal energy distributes mainly within two frequency bands, and the higher frequency component is able to characterize scratches during CMP. Key words: chemical mechanical polishing; acoustic emission; copper; scratch 声发射是材料局部区域快速、不可逆变形时产 等指出晶圆的不同层在抛光过程中声发射水平不 生的弹性波，简称 AE 。AE 信号可灵敏反映材料的 一样，作者给出了信号均方根值（RMS ）随氧化层 损伤过程[1, 2]，且对低频机械噪声不敏感，因此， 抛除而增大的例子；Dornfeld[3]等给出了铜层向钽 声发射技术可应用于机械加工过程监测[3]，如铣削 层的过渡过程中声发射水平升高的例子。总的来 [4] [5] 和车削 。铜是目前半导体领域主流的互连材料，