利用单分子层掺杂技术并结合微波和CO2 雷射退火制作掺杂层小於5奈.PDF

CO 2 5 NANO COMMUNICATION 23 No. 1 33 CO2 5 Poly Si Junctionless Transistors with Sub- 5nm Conformally Doped Layers by Molecular Monolayer Doping and Microwave Incorporating CO2 Laser Annealing 1,2 1,2 1,2 1 1 1 1 1 1 2 CO2 ( 5nm) ( 0.8nm/ dec.) CO2 CO2 ( 107) 3D ICs Abstract A novel conformal shell doping profile (SDP) junctionless (JL) fin thin film transistor (FinTFT) formed by a damage-free molecular monolayer doping (MLD) method and a combination of microwave annealing (MWA) and CO2 laser spike annealing (COLSA) is proposed and studied. Thanks to microwave annealing, an ultra-shallow (sub 5nm) and steep ( 0.8 nm/dec) doping profile is obtained. Moreover, the nonmelting COLSA can avoid dopant diffusion. As a result, we combine MWA and COLSA to enhance dopant activation and recover defect in our research. Finally, by the hybrid method, the JLFinTFT shows superior gate control (Ion/Ioff 107) for 3D stacked ICs applications in the future. Keywords CO 2 Microwave Annealing CO laser Spike Annealing Molecular Monolayer Doping 2 5 34 [6]