模拟电子技术 第五版 康光华（Simulate electronic technology fifth edition kang guanghua）.docVIP

模拟电子技术 第五版 康光华（Simulate electronic technology fifth edition kang guanghua） This article is dedicated to gratitude Doc documents may have a poor browsing experience at the WAP end. It is recommended that you choose TXT, or download the source file to the native view. The second chapter Operational amplifier 3 diode and its basic circuit 3.1 semiconductor basic knowledge 3.1.1 semiconductor material silicon is the most commonly used semiconductor material. Volt ampere characteristic (v-i). 3.1.2 semiconductor covalent bonding structure The conductivity of a semiconductor has to do with valence electrons. 3.1.3 the important physical properties of the semiconductor semiconductor, hole and its conductive properties: electrical conductivity. The higher the charge carrier concentration (its own nature, temperature value, impurity), the higher the conductivity. Eigen excitation: free electrons produced by thermal excitation, which are left behind by valence electrons. Hole: the presence of holes is an important characteristic of semiconductors that are different from conductors. The current that is generated by the current representation of the electrons is bound by the current representation of the electrons moving from the x1 to the x2 to the x3 (the actual electron moving x3 to the x1). The root cause of the current is the cavity in the covalent bond. The more empty holes, the more the number of carriers in the semiconductor, the greater the current. Holes and electrons always come in pairs: ni = PI. The generation of carrier and the compound temperature must be dynamic equilibrium. The conductivity of the semiconductor will increase with the increase of temperature. 3.1.4 semiconductor impurity: cavity (P) type semiconductor and electronic (N) 1 P type semiconductor semiconductor definition: mixed with a small amount of trivalent impurities in silicon crystal (b) (acceptor impurities or P type). Many children: holes. Children: electrons. N A (acceptor atom concentratio