碳化硅MOSFET用于500V低压直流断路器的可行性研究.docxVIP

碳化硅MOSFET用于500V低压直流断路器的可行性研究*丁锐，石新春（华北电力大学新能源与电力系统国家重点实验室,河北保定 071003）摘要：碳化硅MOSFET具有低导通损耗、开断速度快、耐高温等优点，其优异的开断性能是研制低压直流断路器的理想选择。从现有直流电压等级、绝缘水平和用电安全等角度确定断路器的工作电压等级，并搭建简易低压直流电路模型，估算模型中的各元件参数。在此基础上对断路器正常和短路两种状态下的过电压进行计算，同时根据厂家提供的碳化硅MOSFET参数及特性曲线，利用仿真软件saber建立模型，进行操作过电压分析。并设计两种过电压保护电路使SiC-MOSFET更加安全可靠工作，证明碳化硅MOSFET用于500V直流断路器的可行性。关键词：碳化硅MOSFET；直流断路器；直流电路模型；操作过电压；过电压保护电路中图分类号：TM933 文献标识码：B 文章编号：1001-1390（2015）00-0000-00The silicon carbide MOSFET feasibility study for 500V low voltage DC circuit breakerDing Rui, Shi Xinchun(State Key Laboratory of New Energy and Power System,North China Electric Power University, Baoding 071003, Hebei, China)Abstract: Silicon carbide MOSFET has the advantages of low conduction loss, high opening speed and high temperature resistance. Its excellent breaking performance is an ideal choice for the development of low voltage DC circuit breakers. From the point of view of the current DC voltage level, the level of insulation and the safety of the circuit breaker, the operating voltage levels of the circuit breaker are determined, and a simple low voltage DC circuit model is built to estimate the parameters of the components in the model. On the basis of this, the overvoltage of circuit breaker is calculated under two conditions of normal and short circuit, meanwhile, according to the MOSFET parameters and characteristic curve of silicon carbide provided by the manufacturer, the simulation software saber is employed to establish the model, for the purpose of operating the over voltage analysis. And the design of two kinds of overvoltage protection circuits to make SiC-MOSFET work more securely and reliably, the feasibility of silicon carbide MOSFET for 500V DC circuit breaker is proved.Keywords: silicon carbide MOSFET, DC circuit breaker, DC circuit model, operating over voltage, overvoltage protection circuit0引言低压直流电网具有电源转换效率高、成本低、节约空间和供电可靠性高等一系列优点，未来有望作为交流电网的重要补充而实现大规模的应用。现今制约低压直流电网发展的一个重要因素是直