掺铝氧化锌薄膜的光电性能.pdf

37 6 ( ) Vol. 37 No6 2006 12 J. CENT. SOUTH UNIV. ( SCIENCE AND TECHNOLOGY) Dec. 2006 , , ( 中南大学 物理科学与技术学院, 湖南长沙, 410083) : 采用直流磁控溅射技术, 以氧化锌铝陶瓷靶为靶 , 在玻璃衬底上制备掺铝氧化锌薄膜, 研究不同工艺参 数对薄膜组织结构光学性质和电学性质的影响从薄膜的结构载流子浓度和迁移率等方面分析掺铝氧化锌薄 膜的透射率和电阻率的变化机理研究结果表明: 掺铝氧化锌薄膜具有六角纤锌矿结构且呈 c 轴择优取向, 晶粒 垂直于衬底方向柱状生长, 衬底温度和氧分压对薄膜的电阻率和透射率具有很大影响在衬底温度为200 氧 气与氩气的分压比为1% 时, 薄膜具有最优电阻率和平均透射率, 分别达到 1. 13 10- 3 cm 和86. 5% :掺铝氧化锌薄膜; 透射率; 电阻率 : O484.4 : A : 2006) Optical and electrical properties o Aldoped ZnO thin ilms YANG Bi gchu, LI Xueyo g, NIE Guozhe g ( School of Physics Scie ce a d T ech ology, Ce tral South U iversity, Cha gsha 410083, Chi a) Abstract: U si g Z O mixed w ith 3% Al2 O3 ( mass fractio ) as target, Aldoped Z O thi films w ere deposited o glass substrate by mea s of direct curre t mag etro sputteri g, a d the i flu e ces of the depositio parameters o the crystallizatio behavior as w ell as optical a d electrical properties of A ldoped Z O films w ere i vestigated. The cha ge mecha ism of the electrical resis tivity a d optical tra smitta ce w as studied from the crystallizatio behavior as w ell as the carrier co ce tratio a d mobility . The results reveal that A ldoped Z O film is polycrystalli e w ith the hexago al crystal structure a d has a stro gly preferred orie tatio of c axis perpe dicular to the substrate surface. The electrical resistivity a d optical tra smitta ce of Aldoped Z O films are obviously i flue ced by the substrate temperature a d oxyge partial pressure. The obtai ed film exhibits optimal - 3 electrical a d optical properties: electrica