非晶硅薄膜的镍离子注入研究 - 表面技术.PDF

摇摇摇 98 李军利等摇 非晶硅薄膜的镍离子注入研究 非晶硅薄膜的镍离子注入研究 李军利,刘卫国,周顺,蔡长龙 (西安工业大学 微光电系统研究所,西安710032) 摇 摇 [摘摇 要]摇 为得到具有器件应用价值的非晶硅薄膜,首先采用等离子体增强化学气相沉积系统获得非晶硅 薄膜,之后用离子注入设备对该薄膜进行镍离子注入掺杂。 用椭偏仪测试薄膜厚度,得知非晶硅薄膜厚度为200 nm,且沉积工艺稳定。 X射线衍射仪测试表明,所沉积的薄膜属于完全非晶态。 用四探针薄膜电阻测试设备测试 19 3 非晶硅薄膜的方块电阻,结果表明,当掺杂浓度为2.5伊10 个/ cm ,离子注入能量为35.2 keV 时,掺杂后的非晶 硅薄膜具有较好电学性质,TCR约为-0.7%,室温下的方块电阻为992 k赘/ 阴。 [关键词]摇 非晶硅薄膜; 离子注入;电学性质 [中图分类号]TG174.444 摇 摇 摇 [文献标识码]A 摇 摇 摇 [文章编号]1001鄄3660(2013)02鄄0098鄄03 Study on Amorphous Silicon Film Doped by Ni Ion Implantation LI Jun鄄li,LIU Wei鄄guo,ZHOUShun,CAI Chang鄄long (Micro鄄optoelectronic Systems Lab,Xi忆an Technological University,Xi忆an710032,China) [Abstract]摇 In order to get good amorphous silicon film applicable for devices,amorphous silicon (琢鄄Si:H) film was aquired by plasmaenhancedchemicalvapordepositionsystem (PECVD). ThenthefilmwasdopedbyNiionimplantation. The thickness of the film was measured by spectroscopic ellipsometry,which was about200nm stably in the decided deposition pa鄄 rameters. XRD test shown that the film was completely amorphous. Square resistance of the doped film was tested by the four 19 3 point probe test instrumentfinally. Theresult showsthat,inNiionimplantationparametersof2.5伊10 个/ cm and35.2 keV, amorphous siliconfilmwithgoodelectronicalpropertyisacquired. AndTCRofthefilmisabout -0.7%. Andsquareresistance of the film is992 k赘/ 阴at room temperature. [Key words]摇 amorphous silicon film;ion implantation;electrical properties 摇 摇 随着非晶硅薄膜在工程领域的应用,特别是作为 [1] [2] 非制冷红外探测阵列敏感层 、太阳能电池吸收层 1摇 薄膜制备和离子注入 和非晶硅薄膜晶体管材料[3—4] 的重要应用,其研究取 得了很大的进展。 作为器件应用的非晶硅薄膜通常需