具有步阶射极结构之磷化铟镓／砷化镓／ 砷化铟镓异质接面双极性电.PDF

具有步階射極結構之磷化銦鎵／砷化鎵／砷化銦鎵異質接面雙極性電晶體 37 國 立 高 雄 師 範 大 學 高雄師大學報 2006, 21,37-54 具有步階射極結構之磷化銦鎵／砷化鎵／ 砷化銦鎵異質接面雙極性電晶體 蔡榮輝1 摘 要 本論文主要論述一種具有步階射極結構之磷化銦鎵/ 砷化鎵/ 砷化銦鎵異 質接面雙極性電晶體。關於此元件將以理論分析描述其能帶及載子分佈。相 較於傳統的磷化銦鎵/砷化鎵異質接面雙極性電晶體，本元件在基-射極接面加 入一層砷化銦鎵量子井，可有效提升對電洞的侷限效應。實驗的結果顯示其 電流增益達 220 。特別是，由於採用了n 型砷化鎵射極與 n 型砷化銦鎵量子 井，可消除基-射極接面之位障尖峰，進而使集-射極之補償電壓低至 70 mV 。 因此，本研究元件極適合於線性放大器及電路應用。 關鍵詞：步階射極、異質接面雙極性電晶體、侷限效應、補償電壓、位障尖峰 1 國立高雄師範大學電子工程學系教授。 38 高雄師大學報 第二十一期 An InGaP/GaAs/InGaAs Heterojunction Bipolar Transistor with Step-Emitter Structure Jung-Hui Tsai 1 Abstract In this paper, a high-performance InGaP/GaAs/InGaAs step-emitter bipolar transistor is demonstrated. For the device performances, the energy bands and carrier distributions are described by theoretical analysis. Because the confinement effect for holes is substantially enhanced by the addition of an InGaAs quantum well at base-emitter junction as compared to the conventional InGaP/GaAs heterojunction bipolar transistor, the experimental device exhibits a high current gain up to 220. In particular, a relatively low collector-emitter offset voltage of 70 mV is observed, attributed to the neglect of potential spike at base-emitter junction by the employments of an n-type GaAs emitter and an InGaAs quantum well. Consequently, the excellent performances of the studied device provide a promise for linear amplifiers and circuit applications. Key words: step-emitter, heterojunction bipolar transistor, confinement effect, offset voltage, potential