晶体二极管的分类一、根据构造分类半导体二极管主要是依靠PN结而工作（Classification of crystal diodes first, according to the classification of structures, semiconductor diodes work mainly relying on PN junction）.docVIP

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晶体二极管的分类一、根据构造分类半导体二极管主要是依靠PN结而工作（Classification of crystal diodes first, according to the classification of structures, semiconductor diodes work mainly relying on PN junction）.doc

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晶体二极管的分类一、根据构造分类半导体二极管主要是依靠PN结而工作（Classification of crystal diodes first, according to the classification of structures, semiconductor diodes work mainly relying on PN junction） Classification of crystal diodes: first, according to the classification of structures, semiconductor diodes mainly rely on PN junction and work,.Txt wait too long to get things, most of them have not originally wanted. A layer of a cool autumn rain, a valve and a fragrance, as time since unforgettable, a busy but nowhere to hide. Happy life nine words: there is hope, something to do, someone to love. Women and women as friends, to the attitude of the green leaves, but also hidden red flowers scheming. Classification of crystal diodes Classification according to structure Semiconductor diodes work mainly on PN junctions. An inseparable point contact type and Schottky type with PN junction are also included in the general diode range. Including these two models, according to the features of the PN structure, the crystal diodes are classified as follows: 1, point contact diode A point contact diode is formed by pressing a metal needle on a single sheet of germanium or silicon material and by means of an electric current. Therefore, the PN junction has small electrostatic capacity and is suitable for high frequency circuits. However, compared with the junction type, the point contact diode has poor forward and reverse characteristics, so it can not be used for high current and rectification. Because the construction is simple, so the price is cheap. For small signal detection, rectification, modulation, mixing and limiting, it is a wide range of applications. 2, button type diode The bonding diode is formed by fusing silver or silver filaments on a single crystal of germanium or silicon. Its characteristic is between point contact type diode and alloy type diode. Compared with the point contact type, although the junction capacity of the junction diode is slightly increased, the forward charact