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单晶注意(Single crystal attention)
单晶注意(Single crystal attention)
Single crystal training
Simple drawing course for CZ SINGLE CRYSTAL
Section 1 equipment cognition
I. requirements for crystal growth
1., we must maintain the high-purity raw materials, production equipment, production environment of high purity hygiene;
2. crystal growth is carried out at high temperatures. In order to avoid the oxidation of silicon, it must be carried out under vacuum system and protective gas (argon);
We must keep the speed and temperature stability in the process of pulling 3;
Two. The composition of CZ single crystal furnace
In accordance with the requirements of crystal growth, the Czochralski single crystal furnace mainly consists of six parts: furnace body, electrical part, heat system, water cooling system, vacuum system and argon supply device;
The 1. furnace body comprises a lifting head, an auxiliary furnace chamber, an upper furnace chamber, a main furnace chamber and a base;
2. the electrical part includes the speed part, heating part, vacuum system control, argon control, furnace barrel lifting control and so on;
2.1 speed part includes upper and lower shaft speed (SL), upper shaft speed (SR), lower shaft upper and lower speed (CL), lower shaft speed (CR) four parts;
The speed of the 2.2 normal when pulling:
SL: direction and size control can be controlled by a touch screen or a crystal box. The two can switch from each other. Note that the operator must close the power source of the crystal box before the operator is in the furnace to avoid the accident! Normal when pulling in about 1.2 - SL numerical range about 0.6mm/min;
CL: the direction and size control by the touch screen, the normal change of the size of the crystal with SL and the change in proportion to CL/SL; commonly known as the crucible track proportion; the crucible track proportion with crystal drawing size changes; in the actual pulling process in a timely manner to verify the crucible track proportion to determine its correctness and jud
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